| PART |
Description |
Maker |
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| BY133 1N4005 1N4004 |
Silicon Rectifier Diodes 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
EIC discrete Semiconductors
Electronics Industry Public Company Limited
EIC SEMICONDUCTOR INC
|
| RL153G-F 1N4007GH05 1N4007GH03-2 1N4005GH08 |
1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
RECTRON LTD
|
| JANS1N6663 |
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 600; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
|
| ER1J-LTP |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
|
MICRO COMMERCIAL COMPONENTS
|
| UF1J-GT3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
|
SENSITRON SEMICONDUCTOR
|
| RGF1J-E3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214BA
|
VISHAY SEMICONDUCTORS
|
| ERA22-02 ERA22-06 |
0.5 A, 200 V, SILICON, SIGNAL DIODE
0.5 A, 600 V, SILICON, SIGNAL DIODE
|
FUJI ELECTRIC CO LTD
|
| RL107V01 RL105N04 |
1 A, 1000 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
|
DIODES INC
|
| FR103-T3 FR105-T3 FR103-GT3 |
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
SENSITRON SEMICONDUCTOR
|
| 1N3613GPE |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
|
Vishay Beyschlag
|
|
